parameter l value unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current i c 12.0 a base current i b 6.0 a total dissipation at p tot 110 w max. operating junction temperature t j 150 o c storage temperature t stg -55~150 o c MJE13009 description parameter symbol test conditions min. typ. max. unit collector cut-off current i ceo v cb =400v, i e =0 1.0 ma emitter cut-off current i ebo v eb =9v, i c =0 1.0 ma collector-emitter sustaining voltage v ceo i c =10ma, i b =0 400 v dc current gain h fe(1) v ce =5v, i c =5.0a 8 40 h fe(2) v ce =5v, i c =8.0a 6 30 collector-emitter saturation voltage v ce(sat) i c =8.0a,i b =1.6a 1.5 v i c =12.0a,i b =3.0a 3.0 base-emitter saturation voltage v be(sat) i c =8.0a,i b =1.6a 1.6 v current gain bandwidth product f t v ce =10v,i c =500ma 4 mhz storage time t s i b1 =i b2 =1.6a t p =25us 3.5 4 us switchmode series npn silicon power transistors product specification CC these devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220 v switchmode such as switching regulators, inverters, motor controls,applications solenoid/relay drivers and deflection circuits. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o to-3pn tiger electronic co.,ltd
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